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High precision development line
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蚀刻线
蚀刻线

High precision development line

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SES outer etching line: capacity: 0.05 ~ 4.0 board thickness, 2/2 dense line, high-pressure film removal + vacuum etching + palladium removal (tin removal), etching uniformity is more than 95%, etching factor is 4.0. Suitable for HDI and more Layer line fine line processing.

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